GaN channel Nanoscale MOSFET with Silicon Source and Drain and Silicon Germanium Bulk

Authors

  • Das B Dept. of Electronics & Communication Engineering Girijananda Choudhury Institute of Management and Technology, Guwahati, India

Keywords:

MOSFET, GaN, Silicon Germanium, On-Off current ratio, mobility

Abstract

Extensive scaling in Conventional MOSFETs lead to degradation to their electrical parameters. This work proposes a GaN channel Nanoscale MOSFET for improvement in Electron Mobility, Off current with satisfactory On current, Threshold voltage and Subthreshold Swing Off current of the order of 10-11 A/um and Electron Mobility of around 1300 cm2/ V-s are obtained.

References

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Published

2025-11-11

How to Cite

[1]
B. Das, “GaN channel Nanoscale MOSFET with Silicon Source and Drain and Silicon Germanium Bulk”, Int. J. Comp. Sci. Eng., vol. 4, no. 7, pp. 140–143, Nov. 2025.

Issue

Vol. 4 No. 7 (2016): IJCSE Special Issue December Edition

Section

Research Article

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