RATURI, Ashish; BHATT, Kamlesh. Improved stability and access time Using Different 6T SRAM Cells at Low Voltage. International Journal of Computer Sciences and Engineering, [S. l.], v. 7, n. 7, p. 298–301, 2019. DOI: 10.26438/ijcse/v7i7.298301. Disponível em: https://ijcse.isroset.org/index.php/j/article/view/6997. Acesso em: 2 feb. 2026.