SINGH, Anugrah Narayan; KONETI, Ravi. Leakage Reduction Technique on FinFET Based 7T and 8T SRAM Cells. International Journal of Computer Sciences and Engineering, [S. l.], v. 3, n. 5, p. 148–157, 2015. Disponível em: https://ijcse.isroset.org/index.php/j/article/view/516. Acesso em: 2 feb. 2026.