DAS, Basab. GaN channel Nanoscale MOSFET with Silicon Source and Drain and Silicon Germanium Bulk. International Journal of Computer Sciences and Engineering, [S. l.], v. 4, n. 7, p. 140–143, 2025. Disponível em: https://ijcse.isroset.org/index.php/j/article/view/1318. Acesso em: 2 feb. 2026.